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2SA985 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) Good Linearity of hFE Complement to Type 2SC2275 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications High frequency power

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Datasheet Details

Part number 2SA985
Manufacturer INCHANGE
File Size 203.82 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor 2SA985 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2275 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 1.
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