2SB1007
2SB1007 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
- Good Linearity of h FE
- plement to Type 2SD1378
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-0.7
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
10 W
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1007 isc website：.iscsemi....
