2SB1033
2SB1033 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
- Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
- plement to Type 2SD1437
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Total Power Dissipation @ TC=25℃
Junction Temperature
-3
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
