2SB1075
2SB1075 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector Current -IC= -2A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min.)
- Good Linearity of h FE
- Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max.)@ IC= -3A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
VCEO
Collector-Emitter Voltage
-40
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-2
Collector Current-Pulse
Collector Power Dissipation @ Ta=25℃
Junction Temperature
-4
℃...
