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2SB1086 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V (Min) Wide Area of Safe Operation Complement to Type 2SD1563 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low frequency power amplifier applications.

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isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1563 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 10 W 1.2 150 Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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