2SB1086
2SB1086 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V (Min)
- Wide Area of Safe Operation
- plement to Type 2SD1563
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
VCEO Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5.0
Collector Current-Continuous
-1.5
Collector Current-Peak
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
Junction Temperature
-3
10 W
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi....
