Datasheet4U Logo Datasheet4U.com

2SB1101 Datasheet - INCHANGE

PNP Transistor

2SB1101 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) *Complement to Type 2SD1601 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power.

2SB1101 Datasheet (209.77 KB)

Preview of 2SB1101 PDF

Datasheet Details

Part number:

2SB1101

Manufacturer:

INCHANGE

File Size:

209.77 KB

Description:

Pnp transistor.

📁 Related Datasheet

2SB1100 Silicon PNP Power Transistors (Inchange Semiconductor)

2SB1101 PNP Transistor (Hitachi Semiconductor)

2SB1101 SILICON POWER TRANSISTOR (SavantIC)

2SB1102 PNP Transistor (Hitachi Semiconductor)

2SB1102 SILICON POWER TRANSISTOR (SavantIC)

2SB1102 PNP Transistor (INCHANGE)

2SB1103 PNP Transistor (Hitachi Semiconductor)

2SB1103 PNP Transistor (INCHANGE)

2SB1103 SILICON POWER TRANSISTOR (SavantIC)

2SB1105 SILICON POWER TRANSISTOR (SavantIC)

TAGS

2SB1101 PNP Transistor INCHANGE

Image Gallery

2SB1101 Datasheet Preview Page 2

2SB1101 Distributor