Download 2SB1154 Datasheet PDF
Inchange Semiconductor
2SB1154
2SB1154 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) - Good Linearity of h FE - Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -6A - plement to Type 2SD1705 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -7 Collector Current-Continuous -10 Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ Junction Temperature -20 70...