2SB1186A
2SB1186A is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min.)
- Good Linearity of h FE
- plement to Type 2SD1763A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications.
- Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
VCEO
Collector-Emitter Voltage
-160
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-1.5
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
Junction Temperature
-3
2...
