2SB1187
2SB1187 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
- Wide Area of Safe Operation
- plement to Type 2SD1761
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-3
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
Junction Temperature
-6
2...
