2SB1343 transistor equivalent, pnp transistor.
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
*High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -2A)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for .
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