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2SB1353 Datasheet Preview

2SB1353 Datasheet

Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Good Linearity of hFE
· Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Complement to Type 2SD2033
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
-1.5
A
1.8
W
20
150
Tstg
Storage Temperature Range
-55~150
2SB1353
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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2SB1353 Datasheet Preview

2SB1353 Datasheet

Silicon PNP Power Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Cain
IC= -0.1A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.1A ; VCE= -5V
hFE Classifications
D
E
F
60-120 100-200 160-320
2SB1353
MIN TYP. MAX UNIT
-120
V
-120
V
-5
V
-2.0
V
-10 μA
-10 μA
60
320
50
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SB1353
Description Silicon PNP Power Transistor
Maker INCHANGE
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