2SB1366
2SB1366 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
- Collector Power Dissipation-
: PC= 25 W@ TC= 25℃
- Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A)
- plement to Type 2SD2058
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
-3
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
Junction Temperature
-0.5...
