2SB1367
2SB1367 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
- Collector Power Dissipation-
: PC= 30W@ TC= 25℃
- Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A)
- plement to Type 2SD2059
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-5
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
-0.5...
