Datasheet Details
| Part number | 2SB1373 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.31 KB |
| Description | PNP Transistor |
| Download | 2SB1373 Download (PDF) |
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| Part number | 2SB1373 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.31 KB |
| Description | PNP Transistor |
| Download | 2SB1373 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2066 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -20 A 120 W 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1373 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;
IB= -0.8A VBE(on) Base -Emitter On Voltage IC= -8A;
isc Silicon PNP Power Transistor 2SB1373.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1373 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1370 | PNP Transistor |
| 2SB1371 | PNP Transistor |
| 2SB1372 | PNP Transistor |
| 2SB1375 | PNP Transistor |
| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |
| 2SB1341 | PNP Transistor |