Datasheet4U Logo Datasheet4U.com

2SB1382 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

📥 Download Datasheet

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) ·Complement to Type 2SD2082 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1382 APPLICATIONS ·Designed for chopper regulator, DC motor driver and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -26 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 75 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1382 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;

Overview

isc Silicon PNP Darlington Power Transistor.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Sanken electric Logo 2SB1382 Silicon PNP Transistor Sanken electric
SavantIC Logo 2SB1382 SILICON POWER TRANSISTOR SavantIC

More Datasheets from Inchange Semiconductor

Part Number Description
2SB1381 PNP Transistor
2SB1383 PNP Transistor
2SB1389 PNP Transistor
2SB1315 PNP Transistor
2SB1317 PNP Transistor
2SB1334 PNP Transistor
2SB1335 PNP Transistor
2SB1339 PNP Transistor
2SB1341 PNP Transistor
2SB1342 PNP Transistor