2SB1382 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage-.
2SB1382 is PNP Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage-.