Datasheet Details
| Part number | 2SB1389 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.77 KB |
| Description | PNP Transistor |
| Download | 2SB1389 Download (PDF) |
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| Part number | 2SB1389 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.77 KB |
| Description | PNP Transistor |
| Download | 2SB1389 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -8 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1389 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
isc Silicon PNP Darlington Power Transistor 2SB1389.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1389 | Silicon PNP Transistor | Hitachi Semiconductor |
 |
2SB1389 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1381 | PNP Transistor |
| 2SB1382 | PNP Transistor |
| 2SB1383 | PNP Transistor |
| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |
| 2SB1341 | PNP Transistor |
| 2SB1342 | PNP Transistor |