Datasheet Details
| Part number | 2SB1411 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.27 KB |
| Description | PNP Transistor |
| Download | 2SB1411 Download (PDF) |
|
|
| Part number | 2SB1411 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.27 KB |
| Description | PNP Transistor |
| Download | 2SB1411 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1411 APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 2 W 20 150 ℃ Tstg Storage Temperature isc website：www.iscsemi.cn -55~150 ℃ 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
isc Silicon PNP Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1411 | Silicon PNP Transistor | Toshiba Semiconductor |
 |
2SB1411 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1419 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |
| 2SB1429 | PNP Transistor |
| 2SB1430 | PNP Transistor |
| 2SB1431 | PNP Transistor |