Datasheet Details
| Part number | 2SB1419 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.49 KB |
| Description | PNP Transistor |
| Download | 2SB1419 Download (PDF) |
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| Part number | 2SB1419 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.49 KB |
| Description | PNP Transistor |
| Download | 2SB1419 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -20 A 120 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1419 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1419 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;
IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -8A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1419 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1411 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |
| 2SB1429 | PNP Transistor |
| 2SB1430 | PNP Transistor |
| 2SB1431 | PNP Transistor |