Datasheet Details
| Part number | 2SB1436 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.36 KB |
| Description | PNP Transistor |
| Download | 2SB1436 Download (PDF) |
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| Part number | 2SB1436 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.36 KB |
| Description | PNP Transistor |
| Download | 2SB1436 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 5W(Max)@TC=25℃ ·Complement to Type 2SD2166 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Pulse PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 5 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1436 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SB1436 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;
isc Silicon PNP Power Transistors.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1436 | Transistor | Rohm |
 |
2SB1436 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1430 | PNP Transistor |
| 2SB1431 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |