Datasheet Details
| Part number | 2SB1455 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.23 KB |
| Description | PNP Transistor |
| Download | 2SB1455 Download (PDF) |
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| Part number | 2SB1455 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.23 KB |
| Description | PNP Transistor |
| Download | 2SB1455 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -4A, IB= -0.4A) ·Complement to Type 2SD2203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1455 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1455 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
 |
2SB1455 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1454 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |
| 2SB1429 | PNP Transistor |