Datasheet Details
| Part number | 2SB1468 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.04 KB |
| Description | PNP Transistor |
| Download | 2SB1468 Download (PDF) |
|
|
| Part number | 2SB1468 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.04 KB |
| Description | PNP Transistor |
| Download | 2SB1468 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A) ·Complement to Type 2SD2219 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed inverters,converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -20 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1468 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1468 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |
| 2SB1429 | PNP Transistor |
| 2SB1430 | PNP Transistor |