Datasheet Details
| Part number | 2SB1477 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.68 KB |
| Description | PNP Transistor |
| Download | 2SB1477 Download (PDF) |
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| Part number | 2SB1477 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.68 KB |
| Description | PNP Transistor |
| Download | 2SB1477 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD2236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1477 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1477 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Beakdown Voltage IC= -10mA;
IB= 0 V(BR)CBO Collector-Base Beakdown Voltage IC= -50μA;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1477 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1477 | Silicon PNP Power Transistor | New Jersey Semi-Conductor |
| Part Number | Description |
|---|---|
| 2SB1470 | PNP Transistor |
| 2SB1478 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |