Datasheet Details
| Part number | 2SB1478 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 232.16 KB |
| Description | PNP Transistor |
| Download | 2SB1478 Download (PDF) |
|
|
| Part number | 2SB1478 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 232.16 KB |
| Description | PNP Transistor |
| Download | 2SB1478 Download (PDF) |
|
|
|
·High DC Current Gain- : hFE = 2000(Min)@ IC= -2A ·Low Collector Saturation Voltage- : VCE(sat) = -2.0V(Max.) @IC= 5A ·Complement to Type 2SD2237 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -8 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1478 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1478 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
IE=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -2mA;
isc Silicon PNP Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1478 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB1478 | Silicon PNP Darlington Power Transistor | New Jersey Semi-Conductor |
| Part Number | Description |
|---|---|
| 2SB1470 | PNP Transistor |
| 2SB1477 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |