Datasheet Details
| Part number | 2SB1492 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.75 KB |
| Description | PNP Transistor |
| Download | 2SB1492 Download (PDF) |
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| Part number | 2SB1492 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.75 KB |
| Description | PNP Transistor |
| Download | 2SB1492 Download (PDF) |
|
|
|
·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2254 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Optimum for 60W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -10 A 70 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1492 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
isc Silicon PNP Darlington Power Transistor 2SB1492.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1492 | Silicon PNP Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| 2SB1490 | PNP Transistor |
| 2SB1495 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |