Datasheet Details
| Part number | 2SB1507 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.87 KB |
| Description | PNP Transistor |
| Download | 2SB1507 Download (PDF) |
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| Part number | 2SB1507 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.87 KB |
| Description | PNP Transistor |
| Download | 2SB1507 Download (PDF) |
|
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·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2280 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 3 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1507 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1507 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1m A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1507 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
 |
2SB1507 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB1507 | Silicon PNP Power Transistor | New Jersey Semi-Conductor |
| Part Number | Description |
|---|---|
| 2SB1502 | PNP Transistor |
| 2SB1503 | PNP Transistor |
| 2SB1508 | PNP Transistor |
| 2SB1530 | PNP Transistor |
| 2SB1548 | PNP Transistor |
| 2SB1548A | PNP Transistor |
| 2SB1550 | PNP Transistor |
| 2SB1551 | PNP Transistor |
| 2SB1555 | PNP Transistor |
| 2SB1556 | PNP Transistor |