Datasheet Details
| Part number | 2SB1551 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 230.75 KB |
| Description | PNP Transistor |
| Download | 2SB1551 Download (PDF) |
|
|
| Part number | 2SB1551 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 230.75 KB |
| Description | PNP Transistor |
| Download | 2SB1551 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain·Built-in resistor between base and emitter ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -20 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1551 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1551 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
isc Silicon PNP Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1551 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1550 | PNP Transistor |
| 2SB1555 | PNP Transistor |
| 2SB1556 | PNP Transistor |
| 2SB1558 | PNP Transistor |
| 2SB1559 | PNP Transistor |
| 2SB1502 | PNP Transistor |
| 2SB1503 | PNP Transistor |
| 2SB1507 | PNP Transistor |
| 2SB1508 | PNP Transistor |
| 2SB1530 | PNP Transistor |