Datasheet Details
| Part number | 2SB1556 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.16 KB |
| Description | PNP Transistor |
| Download | 2SB1556 Download (PDF) |
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| Part number | 2SB1556 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.16 KB |
| Description | PNP Transistor |
| Download | 2SB1556 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Complement to Type 2SD2385 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1556 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1556 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7A;
isc Silicon PNP Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1556 | TRANSISTOR | Toshiba Semiconductor |
 |
2SB1556 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1550 | PNP Transistor |
| 2SB1551 | PNP Transistor |
| 2SB1555 | PNP Transistor |
| 2SB1558 | PNP Transistor |
| 2SB1559 | PNP Transistor |
| 2SB1502 | PNP Transistor |
| 2SB1503 | PNP Transistor |
| 2SB1507 | PNP Transistor |
| 2SB1508 | PNP Transistor |
| 2SB1530 | PNP Transistor |