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2SB1569 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD2400 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3.0 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1569 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1569 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;

Overview

isc Silicon PNP Power Transistor.