Datasheet Details
| Part number | 2SB1642 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.94 KB |
| Description | PNP Transistor |
| Download | 2SB1642 Download (PDF) |
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| Part number | 2SB1642 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.94 KB |
| Description | PNP Transistor |
| Download | 2SB1642 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2.5A, IB= -0.25A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1642 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1642 | Silicon PNP Transistor | Toshiba Semiconductor |
 |
2SB1642 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1640 | PNP Transistor |
| 2SB1647 | PNP Transistor |
| 2SB1649 | PNP Transistor |
| 2SB1603 | PNP Transistor |
| 2SB1604 | PNP Transistor |
| 2SB1605 | PNP Transistor |
| 2SB1606 | PNP Transistor |
| 2SB1607 | PNP Transistor |
| 2SB1624 | PNP Transistor |
| 2SB1625 | PNP Transistor |