2SB1647 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA) Complement to Type 2SD2560 Minimum Lot-to-Lot variations for robust devi

Inchange Semiconductor

📥 Download Datasheet

2SB1647 PNP Transistor by INCHANGE - Datasheet Preview — Datasheet preview – 2SB1647

Datasheet Details

Part number	2SB1647
Manufacturer	Inchange Semiconductor
File Size	234.78 KB
Description	PNP Transistor
Datasheet	2SB1647 Datasheet
Additional preview pages of the 2SB1647 datasheet.

📁 Similar Datasheet

2SB1647 - Silicon PNP Transistor (Sanken electric)
2SB1647 - SILICON POWER TRANSISTOR (SavantIC)
2SB1640 - Silicon PNP Transistor (Toshiba Semiconductor)
2SB1640 - SILICON POWER TRANSISTOR (SavantIC)
2SB1641 - Silicon PNP Epitaxial Transistor (Toshiba)
2SB1642 - Silicon PNP Transistor (Toshiba Semiconductor)
2SB1642 - SILICON POWER TRANSISTOR (SavantIC)
2SB1643 - Silicon PNP Transistor (Panasonic Semiconductor)
2SB1643 - Silicon PNP epitaxial planar type Transistor (Kexin)
2SB1644 - Power Transistor (Rohm)

Other Datasheets by INCHANGE

2SB1640 - PNP Transistor
2SB1642 - PNP Transistor
2SB1649 - PNP Transistor
2SB1603 - PNP Transistor
2SB1604 - PNP Transistor
2SB1605 - PNP Transistor
2SB1606 - PNP Transistor
2SB1607 - PNP Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) ·Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA) ·Complement to Type 2SD2560 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications.

Published: Sep 18, 2020 |