Datasheet Summary
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min)
- High DC Current Gain-
: hFE= 5000( Min.) @(IC= -10A, VCE= -4V)
- Low Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA)
- plement to Type 2SD2560
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio, series regulator and general purpose...
