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2SB449 - PNP Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max.) @IC= -3A Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amp

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max.) @IC= -3A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,switching and DC-DC converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature -3.5 A 22.5 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB449 isc website：www.iscsemi.
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