2SB507
2SB507 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -2.0A
- plement to Type 2SD313
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for the output stage of 15W to 25W AF power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5.0
Collector Current-Continuous
-3.0
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
-6.0
-55~150
℃...
