| Part number | 2SB507 |
|---|---|
| Datasheet | 2SB507-INCHANGE.pdf |
| File Size | 217.02 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A ·plement to Type 2SD313 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB507 | Silicon PNP Power Transistors | SavantIC |
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2SB507 | PNP Epitaxial Silicon Transistor | GME |
 |
2SB507 | PNP Transistor | DC COMPONENTS |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB508 | PNP Transistor |
| 2SB511 | PNP Transistor |
| 2SB512 | PNP Transistor |
| 2SB513 | PNP Transistor |
| 2SB515 | PNP Transistor |
| 2SB518 | PNP Transistor |
| 2SB519 | PNP Transistor |
