Download 2SB511 Datasheet PDF
Inchange Semiconductor
2SB511
2SB511 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) - Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -1.5A - plement to Type 2SD325 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for 5W AF power amplifier output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 VCEO Collector-Emitter Voltage -35 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -1.5 Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ Junction Temperature -3.0 1.75...