2SB512
2SB512 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
- Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -2.0A
- plement to Type 2SD365
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-3
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi.
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