2SB532
2SB532 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
- High Power Dissipation-
: PC= 60W(Max)@TC=25℃
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-80
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
-5
℃
Tstg
Storage Temperature
-65~150 ℃
2SB532 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise...
