Download 2SB536 Datasheet PDF
Inchange Semiconductor
2SB536
2SB536 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) - plement to Type 2SD381 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Audio frequency power amplifier, low speed switching. - Suitable for driver of 60~100 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 VCEO Collector-Emitter Voltage -120 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -1.5 Collector Current-Peak -3.0 Base Current -0.3 Collector Power Dissipation@TC=25℃ Collector Power Dissipation@Ta=25℃...