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2SB546A - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ Complement to Type 2SD401A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated col

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·Complement to Type 2SD401A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.
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