2SB551
2SB551 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Typ.)@IC= -2A
- High Power Dissipation-
: PC= 25W(Max)@TC=55℃
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-50
VCEO
Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-4
Collector Current-Continuous
Collector Power Dissipation @TC= 25℃
Junction Temperature
-3
℃
Tstg
Storage Temperature
-45~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
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