2SB681
2SB681 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For AF power amplifier use.
- Remended for use in output stage of 80 watts power amplifier .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
VCEO Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-12
℃
Tstg
Storage Temperature
-55~150 ℃
2SB681 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise...
