2SB697
2SB697 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
- High Current Capability
- Wide Area of Safe Operation
- plement to Type 2SD733
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for AF power amplifier applications.
- Remended for output stage of 80W power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
VCEO
Collector-Emitter Voltage
-140
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
-12
Emitter Current-Peak
Collector Power Dissipation @TC=25℃
Junction Temperature
-20
℃...
