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2SB720 - PNP Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Wide Area of Safe Operation Complement to Type 2SD760 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection outp

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isc Silicon PNP Power Transistor 2SB720 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD760 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A PC Total Power Dissipation@ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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