2SB757
2SB757 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
- Good Linearity of h FE
- High Current Capability
- Wide Area of Safe Operation
- plement to Type 2SD847
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Audio amplifier applications
- Series regulators
- General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-40
-5
Collector Current-Continuous
Base Current- Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-15
-5...
