2SB791
2SB791 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
- High DC Current Gain
: h FE= 1000(Min) @IC= -4A
- Low Saturation Voltage
- plement to Type 2SD970
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for medium speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
-8
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
-12
℃...
