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2SB791 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) High DC Current Gain : hFE= 1000(Min) @IC= -4A Low Saturation Voltage Complement to Type 2SD970 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medi

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Datasheet Details

Part number 2SB791
Manufacturer INCHANGE
File Size 212.36 KB
Description PNP Transistor
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isc Silicon PNP Darlington Power Transistor 2SB791 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -4A ·Low Saturation Voltage ·Complement to Type 2SD970 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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