| Part number | 2SB791 |
|---|---|
| Datasheet | 2SB791-INCHANGE.pdf |
| File Size | 212.36 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB791 | Silicon PNP Transistor | Hitachi Semiconductor |
|
2SB791K | Silicon PNP Transistor | Hitachi Semiconductor |
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