| Part number | 2SB850 |
|---|---|
| Datasheet | 2SB850-INCHANGE.pdf |
| File Size | 208.70 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.2V(Max) @IC= -5A ·Wide Area of Safe Operation ·plement to Type 2SD1117 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, series regulators and general purpose power amplifiers.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB850 | GENERAL PURPOSE POWER AMPLIFIER | New Jersey Semi-Conductor |
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