2SB850
2SB850 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.2V(Max) @IC= -5A
- Wide Area of Safe Operation
- plement to Type 2SD1117
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio amplifier, series regulators and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-40
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
-10
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-2
℃...
