Datasheet4U Logo Datasheet4U.com

2SB850 Datasheet - INCHANGE

PNP Transistor

2SB850 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.2V(Max) @IC= -5A *Wide Area of Safe Operation *Complement to Type 2SD1117 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APP.

2SB850 Datasheet (208.70 KB)

Preview of 2SB850 PDF

Datasheet Details

Part number:

2SB850

Manufacturer:

INCHANGE

File Size:

208.70 KB

Description:

Pnp transistor.

📁 Related Datasheet

2SB850 GENERAL PURPOSE POWER AMPLIFIER (New Jersey Semi-Conductor)

2SB851 PNP Silicon Transistor (Rohm)

2SB852 Transistor (TY Semiconductor)

2SB852K High-gain Amplifier Transistor (Rohm)

2SB855 SILICON POWER TRANSISTOR (SavantIC)

2SB855 Silicon PNP Power Transistor (Inchange Semiconductor)

2SB856 Silicon PNP Transistor (Hitachi Semiconductor)

2SB856 SILICON POWER TRANSISTOR (SavantIC)

2SB856 Silicon PNP Power Transistor (Inchange Semiconductor)

2SB857 Silicon PNP Transistor (Hitachi Semiconductor)

TAGS

2SB850 PNP Transistor INCHANGE

Image Gallery

2SB850 Datasheet Preview Page 2

2SB850 Distributor