2SB871
2SB871 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -20V(Min)
- High Speed Switching
- Low Collector Saturation Voltage
: VCE(sat)= -0.6V(Max)@IC= -10A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-20
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-10
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
-20
℃
Tstg...
