Datasheet Details
| Part number | 2SB989 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.13 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB989 Download (PDF) |
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| Part number | 2SB989 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.13 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB989 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A) ·Complement to Type 2SD1352 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.4 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB989 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
isc Silicon PNP Power Transistor.
| Part Number | Description |
|---|---|
| 2SB980 | PNP Transistor |
| 2SB981 | PNP Transistor |
| 2SB982 | PNP Transistor |
| 2SB983 | PNP Transistor |
| 2SB986 | PNP Transistor |
| 2SB988 | PNP Transistor |
| 2SB901 | PNP Transistor |
| 2SB919 | PNP Transistor |
| 2SB963 | PNP Transistor |
| 2SB963-Z | PNP Transistor |