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2SC1116 - NPN Transistor

Datasheet Summary

Description

With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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Datasheet Details

Part number 2SC1116
Manufacturer INCHANGE
File Size 173.19 KB
Description NPN Transistor
Datasheet download datasheet 2SC1116 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1116 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 180 V 120 V 6 V 10 A 100 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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