Datasheet Details
| Part number | 2SC1162 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.85 KB |
| Description | NPN Transistor |
| Download | 2SC1162 Download (PDF) |
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| Part number | 2SC1162 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.85 KB |
| Description | NPN Transistor |
| Download | 2SC1162 Download (PDF) |
|
|
|
·High Collector Current IC= 2.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SA715 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A 10 W 0.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1162 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1162 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1162 | Silicon NPN Transistor | Hitachi Semiconductor |
 |
2SC1162 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SC1162 | NPN Transistor | SeCoS |
 |
2SC1162 | NPN Transistor | LGE |
| Part Number | Description |
|---|---|
| 2SC1161 | NPN Transistor |
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| 2SC1106 | NPN Transistor |
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| 2SC1111 | NPN Transistor |
| 2SC1112 | NPN Transistor |
| 2SC1113 | NPN Transistor |
| 2SC1114 | NPN Transistor |
| 2SC1115 | NPN Transistor |