Datasheet Details
| Part number | 2SC1212A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.56 KB |
| Description | NPN Transistor |
| Download | 2SC1212A Download (PDF) |
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| Part number | 2SC1212A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.56 KB |
| Description | NPN Transistor |
| Download | 2SC1212A Download (PDF) |
|
|
|
·High Collector Current -IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 8 W 0.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1212A isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1212A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1212A | Silicon NPN Transistor | Hitachi Semiconductor |
 |
2SC1212A | SILICON POWER TRANSISTOR | SavantIC |
|
2SC1212 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SC1212 | SILICON POWER TRANSISTOR | SavantIC |
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