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2SC1403 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 70 W 150 ℃ Tstg Storage Temperature Range -50~150 ℃ 2SC1403 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector- Emitter Breakdown Voltage IC= 50mA ;

IE= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ;

IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;

Overview

isc Silicon NPN Power Transistor.